? semiconductor components industries, llc, 2014 november, 2014 ? rev. 4 1 publication order number: bc857btt1/d bc857btt1g general purpose transistor pnp silicon these transistors are designed for general purpose amplifier applications. they are housed in the sot?416/sc?75 which is designed for low power surface mount applications. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? this is a pb?free device maximum ratings (t a = 25 c) rating symbol max unit collector?emitter voltage v ceo ?45 v collector?base voltage v cbo ?50 v emitter?base voltage v ebo ?5.0 v collector current ? continuous i c ?100 madc collector current ? peak i c ?200 madc thermal characteristics characteristic symbol max unit total device dissipation, fr?4 board (note 1) t a = 25 c derated above 25 c p d 200 1.6 mw mw/ c thermal resistance, junction?to?ambient (note 1) r ja 600 c/w total device dissipation, fr?4 board (note 2) t a = 25 c derated above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction?to?ambient (note 2) r ja 400 c/w junction and storage temperature range t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?4 @ min pad. 2. fr?4 @ 1.0 1.0 in pad. http://onsemi.com collector 3 1 base 2 emitter case 463 sot?416 style 1 marking diagram 3 2 1 3f 3f = device code m = date code = pb?free package see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information m *date code orientation may vary depending upon manufacturing location. (note: microdot may be in either location)
bc857btt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = ?10 ma) v (br)ceo ?45 ? ? v collector ?emitter breakdown voltage (i c = ?10 a, v eb = 0) v (br)ces ?50 ? ? v collector ?base breakdown voltage (i c = ?10 a) v (br)cbo ?50 ? ? v emitter ?base breakdown voltage (i e = ?1.0 a) v (br)ebo ?5.0 ? ? v collector cutoff current (v cb = ?30 v) collector cutoff current (v cb = ?30 v, t a = 150 c) i cbo ? ? ? ? ?15 ?4.0 na a on characteristics dc current gain (i c = ?10 a, v ce = ?5.0 v) (i c = ?2.0 ma, v ce = ?5.0 v) h fe ? 220 150 290 ? 475 ? collector ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v ce(sat) ? ? ? ? ?0.3 ?0.65 v base ?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) (i c = ?100 ma, i b = ?5.0 ma) v be(sat) ? ? ?0.7 ?0.9 ? ? v base ?emitter on voltage (i c = ?2.0 ma, v ce = ?5.0 v) (i c = ?10 ma, v ce = ?5.0 v) v be(on) ?0.6 ? ? ? ?0.75 ?0.82 v small? signal characteristics current ?gain ? bandwidth product (i c = ?10 ma, v ce = ?5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ?10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ?0.2 ma, v ce = ?5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bc857btt1g http://onsemi.com 3 typical characteristics figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. ?saturation? and ?on? voltages i c , collector current (madc) -0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. base?emitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current?gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0
bc857btt1g http://onsemi.com 4 figure 7. thermal response figure 8. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558 bc557 bc556 the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 8 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 7. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 ordering information device package shipping ? bc857btt1g sot?416 (pb?free) 3,000 / tape & reel NSVBC857BTT1G* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable.
bc857btt1g http://onsemi.com 5 package dimensions sot?416 (sc?75) case 463 issue f notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ?e? ?d? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 bc857btt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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